SIHJ6N65E-T1-GE3-Vishay Siliconix-Transistors - FETs, MOSFETs - Single-Chip-Max Electronics（HongKong) Co.,Limited

SIHJ6N65E-T1-GE3

Part Number: SIHJ6N65E-T1-GE3

Manufacturer: Vishay Siliconix

Description: MOSFET N-CH 650V POWERPAK SO-8L

Data sheet: SIHJ6N65E-T1-GE3.pdf

Category: Transistors - FETs, MOSFETs - Single

Family: Transistors - FETs, MOSFETs - Single

Series: -

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Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	5.6A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	596pF @ 100V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	74W (Tc)
Rds On (Max) @ Id, Vgs	868 mOhm @ 3A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.

RFQ Email: sundy@chip-max.com or Inquires online

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