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SPB80N10L G SPB80N10L G

SPB80N10L G

Part Number
SPB80N10L G
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 100V 80A TO-263
Data sheet
SPB80N10L G.pdf
Category
Transistors - FETs, MOSFETs - Single
Family
Transistors - FETs, MOSFETs - Single
Series
SIPMOS®

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  • Buy the SPB80N10L G Infineon Technologies on Chip-Max Electronics(HongKong) Co.,Limited,we are Infineon Technologies Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the SPB80N10L G within 24 hours,please contact our sales team or send email to sundy@chip-max.com Hope we can cooperate in the future.
    Specifications
    Part Status Discontinued at Digi-Key
    FET Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 100V
    Current - Continuous Drain (Id) @ 25°C 80A (Tc)
    Drive Voltage (Max Rds On,Min Rds On) -
    Vgs(th) (Max) @ Id 2V @ 2mA
    Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
    Input Capacitance (Ciss) (Max) @ Vds 4540pF @ 25V
    Vgs (Max) -
    FET Feature -
    Power Dissipation (Max) 250W (Tc)
    Rds On (Max) @ Id, Vgs 14 mOhm @ 58A, 10V
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Surface Mount
    Supplier Device Package PG-TO263-3-2
    Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Shipment UPS/EMS/DHL/FedEx Express.
    Condtion New original factory.
    RFQ Email
    sundy@chip-max.com or Inquires online
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